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Implantation temperature dependence of Si activation in AlGaN

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Si+ ion implantation at a total dose of 1.0×1015 cm-2 and multiple ion energies in the range of 30–190 keV into Al0.13Ga0.87N layers on sapphire substrates for n-type doping was carried out at substrate temperatures ranging from -196 to 700 °C, followed by annealing at 1150–1400 °C for 5 min. The activation efficiency at fixed annealing temperature (1250 °C) was highest (∼50%) for room temperature implantation and degraded significantly for elevated temperature implantation. The effective Si donor ionization energy decreased with increasing annealing temperature, which may be related to the Mott transition that creates degenerate layers as the activation percentage increased. The minimum sheet resistance obtained was ∼100 Ω/sq after annealing room temperature implants at 1350–1400 °C.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 18 )

Date of Publication:

May 2006

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