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Complex and incommensurate ordering in Al0.72Ga0.28N thin films grown by plasma-assisted molecular beam epitaxy

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7 Author(s)
Wang, Yiyi ; Physics Department, Boston University, Boston, Massachusetts 02215 ; Ozcan, Ahmet S. ; Ludwig, Karl F. ; Bhattacharyya, A.
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Structures with incommensurate ordering along the [0001] direction are observed in wurtzite Al0.72Ga0.28N alloys grown by plasma-assisted molecular beam epitaxy on c-plane sapphire. Films grown in environments with group-III/N ratios greater than 1 exhibit ordered superlattice structures that are incommensurate with the wurtzite crystal lattice. In contrast, films grown under nitrogen-rich conditions exhibit ordered structures with a periodicity of four cation-N monolayers. The increasing complexity of the ordering with increasing Ga-rich growth environment suggests that the ordering is related to the presence of a Ga overlayer believed to exist on the surface of the growing film.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 18 )

Date of Publication:

May 2006

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