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Characteristics of CdTe/ZnTe quantum dots grown on GaAs (100) and Si (100) substrates

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3 Author(s)
Lee, H.S. ; Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Republic of Korea ; Park, H.L. ; Kim, T.W.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2201865 

We have studied the growth of self-assembled CdTe/ZnTe quantum dots (QDs) on both GaAs (100) and Si (100) substrates. The growth of self-assembled CdTe/ZnTe QDs on substrates shows many difficulties which are not completely solved yet. In contrast, on GaAs substrates, good crystalline quality is obtained. The results of the atomic force microscopy images showed that CdTe/ZnTe QDs were formed on GaAs (100) and Si (100) substrates. The activation energy of the electrons confined in the CdTe/ZnTe QDs grown on GaAs (100) and Si (100) substrates was obtained from the temperature-dependent photoluminescence spectra.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 18 )

Date of Publication:

May 2006

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