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Enhanced performance of an InGaN–GaN light-emitting diode by roughening the undoped-GaN surface and applying a mirror coating to the sapphire substrate

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2 Author(s)
Peng, Wei Chih ; Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan 300, Republic of China ; Sermon Wu, YewChung

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2199613 

An InGaN–GaN light-emitting diode (LED) with a roughened undoped-GaN surface and a silver mirror on the sapphire substrate was fabricated through a double transfer method. It was found that, at an injection current of 20 mA, its luminance intensity was 100% larger than conventional LEDs. Its output power was 49% larger than conventional LEDs.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 18 )

Date of Publication:

May 2006

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