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Low-voltage pentacene field-effect transistors with ultrathin polymer gate dielectrics

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5 Author(s)
Yang, Sang Yoon ; Department of Chemical Engineering, Polymer Research Institute, Pohang University of Science and Technology, Pohang 790-784, Korea ; Kim, Se Hyun ; Shin, Kwonwoo ; Jeon, Hayoung
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Organic field-effect transistors (OFETs) for low-voltage operation have been realized with conventional polymer gate dielectrics such as polyimides and cross-linked poly-4-vinyl phenols (PVPs) by fabricating ultrathin films. These ultrathin polymers (thickness ∼10 nm) have shown good insulating properties, including high breakdown fields (≫2.5 MV/cm). With ultrathin dielectrics, high capacitances (≫250 nF/cm2) have been achieved, allowing operation of OFETs within -3 V. Pentacene OFETs with ultrathin PVP dielectrics exhibit a mobility of 0.5 cm2/V s, an on-off ratio of 105, and a small subthreshold swing of 174 mV/decade when devices are operated at -3 V.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 17 )