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ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition

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9 Author(s)
Xu, W.Z. ; State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s Republic of China ; Ye, Z.Z. ; Zeng, Y.J. ; Zhu, L.P.
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We report a breakthrough in fabricating ZnO homojunction light-emitting diode by metal organic chemical vapor deposition. Using NO plasma, we are able to grow p-type ZnO thin films on n-type bulk ZnO substrates. The as-grown films on glass substrates show hole concentration of 1016–1017 cm-3 and mobility of 1–10 cm2 V-1 s-1. Room-temperature photoluminescence spectra reveal nitrogen-related emissions. A typical ZnO homojunction shows rectifying behavior with a turn-on voltage of about 2.3 V. Electroluminescence at room temperature has been demonstrated with band-to-band emission at I=40 mA and defect-related emissions in the blue-yellow spectrum range.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 17 )