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Effect of annealing on dielectric behavior and conduction transport of Bi doped SrTiO3

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2 Author(s)
Ang, Chen ; Department of Physics, The University of Akron, Akron, Ohio 44325 ; Yu, Zhi

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The dielectric behavior and electrical conduction in Bi doped SrTiO3 annealed in both oxidizing (air and oxygen) and reducing atmospheres (nitrogen and “hydrogen+argon”) are studied in this letter. The dielectric constant and electrical conductivity are greatly enhanced in the sample annealed in a reducing atmosphere compared with that annealed in an oxidizing atmosphere. A Mott’s variable range hopping (VRH) conduction mechanism, σ=σ0 exp[-(T0/T)1/4], is observed in a strongly reduced sample, where a significant dielectric relaxation process is present. No direct correlation is found between the VRH conduction and the dielectric relaxation. The underlying physics of these results are briefly discussed.

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Applied Physics Letters  (Volume:88 ,  Issue: 16 )