Cart (Loading....) | Create Account
Close category search window

Dielectric SiO2/ZrO2 distributed Bragg reflectors for ZnO microcavities prepared by the reactive helicon-wave-excited-plasma sputtering method

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Chichibu, S.F. ; Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan ; Ohmori, T. ; Shibata, N. ; Koyama, T.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Reactive helicon-wave-excited-plasma sputtering method is shown to be a suitable technique for the fabrication of high reflectivity (R) distributed Bragg reflectors (DBRs), in particular, operating at the resonance wavelength of B excitons in ZnO (366.5 nm), utilizing quarter-wavelength multilayers of SiO2 and ZrO2 dielectric films. According to the surface-damage-free nature and proper stoichiometry controllability of the method, dense dielectric films exhibiting ideal refractive indices (1.46 for SiO2 and 2.10 for ZrO2 at 633 nm) and small root-mean-square values for the surface roughness (0.20 nm for SiO2 and 0.53 nm for ZrO2) were deposited using Si and Zr targets and O2 gas at room temperature. Optical reflectance spectra of the SiO2/ZrO2 DBRs agreed with those calculated using the optical multilayer film theory, and eight-pair DBR exhibited R higher than 99.5% at 366.5 nm and 82 nm stop bandwidth (R≥95%). The results indicate that the DBR can be used for the realization of polariton lasers using ZnO microcavities.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 16 )

Date of Publication:

Apr 2006

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.