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Characterization and luminescence properties of Sr2Si5N8:Eu2+ phosphor for white light-emitting-diode illumination

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4 Author(s)
Piao, Xianqing ; Center for Advanced Science and Innovation, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan ; Horikawa, Takashi ; Hanzawa, Hiromasa ; Machida, Ken-ichi

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Eu2+-doped ternary nitride phosphor, Sr2Si5N8:Eu2+, was prepared by the carbothermal reduction and nitridation method. The Rietveld refinement analysis showed that the single phase products were obtained. Two main absorption bands were observed on the diffuse reflection spectra peaking at about 330 and 420 nm, so that the resultant phosphor can be effectively excited by InGaN light-emitting diodes. The emission peak position of (Sr1-xEux)2Si5N8:Eu2+ series varied from 618 to 690 nm with increasing Eu2+ ion concentration. The redshift behavior of the emission band was discussed on the basis of the configuration coordination model.

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Applied Physics Letters  (Volume:88 ,  Issue: 16 )