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Effect of Auger recombination on the performance of p-doped quantum dot lasers

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4 Author(s)
Mokkapati, S. ; Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra ACT 0200, Australia ; Buda, M. ; Tan, H.H. ; Jagadish, C.

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Experimental results on spontaneous emission rates from InGaAs quantum dot lasers that can be explained theoretically by considering the influence of nonradiative mixed state recombinations in the quantum dot-wetting layer system are presented. Our model qualitatively explains the experimental results such as an increase in the threshold current density, temperature stability, and a narrower gain spectrum due to doping the quantum dot active region with the acceptors. Our model also predicts that moderate acceptor concentrations can improve the laser performance at higher carrier injection densities; but high acceptor concentrations deteriorate the laser performance due to the nonradiative Auger recombination that counteracts the benefits of increased spontaneous emission rates.

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Applied Physics Letters  (Volume:88 ,  Issue: 16 )