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Second-harmonic generation from Si/SiO2/Hf(1-x)SixO2 structures

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7 Author(s)
Carriles, R. ; Department of Physics, University of Texas at Austin, Austin, Texas 78712-1081 ; Kwon, J. ; An, Y.Q. ; Miller, J.C.
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Optical second-harmonic generation (SHG) is used to characterize thin films of Hf(1-x)SixO2 (x=0, 0.3, 0.45, 0.65, and 1) deposited by atomic layer epitaxy at 375 °C on Si substrates with 11 Å SiO2 buffer layers. Reflected SHG intensity measured at room temperature increases monotonically with Hf content for as-deposited samples and varies strongly with the temperature (600–1000 °C) of postdeposition rapid anneals in NH3. Spectroscopic analysis shows that the variable SHG component peaks at SH photon energy of 3.37 eV—the bulk silicon E1 critical point energy—a clear signature of electric-field-induced second-harmonic generation in the bulk Si space-charge region. The results suggest that SHG is a sensitive, potentially in situ, probe of internal electric fields attributable to composition- and annealing-dependent fixed charge in the oxide layers.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 16 )

Date of Publication:

Apr 2006

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