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Ultrafast carrier dynamics in Au/GaAs interfaces studied by terahertz emission spectroscopy

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6 Author(s)
Shi, Yulei ; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, China ; Yang, Yuping ; Xinlong Xu ; Ma, Shihua
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The measurements of optically generated terahertz emission from Au/GaAs interfaces are investigated in detail. We observe that, under high laser power excitation, terahertz signals from bare GaAs wafers and Au/GaAs samples exhibit an opposite polarity. The polarity-flip behaviors are also observed in temperature-dependent and femtosecond pump-generation studies of the Au/GaAs interfaces.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 16 )

Date of Publication:

Apr 2006

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