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Si emission from the SiO2/Si interface during the growth of SiO2 in the HfO2/SiO2/Si structure

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9 Author(s)
Zhao Ming ; Department of Micro Engineering, Kyoto University, Yoshida-honmachi, Sakyo, Kyoto 606-8501, Japan ; Nakajima, K. ; Suzuki, M. ; Kimura, K.
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HfO2/SiO2/Si(001) structures were annealed in dry oxygen, and compositional depth profiles were measured by high-resolution Rutherford backscattering spectroscopy. Growth of the interfacial SiO2 layer and simultaneous surface accumulation of Si were observed. The observed result indicates that silicon species are emitted from the SiO2/Si interface to release the stress induced by oxidation as was predicted by recent theoretical studies.

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Applied Physics Letters  (Volume:88 ,  Issue: 15 )