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Characterization of focused-ion-beam-induced damage in n-type silicon using Schottky contact

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5 Author(s)
Xia, Ling ; National Key Laboratory of Micro/Nano Fabrication Technology, Institute of Microelectronics, Peking University, Beijing 100871, People’s Republic of China ; Wengang Wu ; Yilong Hao ; Wang, Yangyuan
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The effects of focused-ion-beam-induced damage on electrical properties of n-type Si are investigated by Schottky contacts. Crystalline Si is exposed to 10–30 keV focused ion beam (FIB), followed by Pt deposition under vacuum of 4×10-4 Pa. From current-voltage-temperature measurements, barrier heights of the Schottky contacts are found to increase almost linearly as the FIB energy increases, with the maximum increment of 0.29 eV. The increase is suggested to be related to the arising of acceptorlike defects and an amorphous layer due to FIB damages. A theoretical model is set up to quantitatively describe the barrier height changes.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 15 )