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Preliminary studies of the effect of x-ray irradiation, typically used to simulate radiation effects in space, on top contact, pentacene based field effect transistors have been carried out. Threshold voltage shifts in irradiated devices are consistent with positive charge trapping in the gate dielectric and a rebound effect is observed, independent of the sign of applied electric field during irradiation. Carrier mobility variations in positive electric field biased/irradiated devices are interpreted in terms of the effects of interface-state-like defects.