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Highly strain-relaxed ultrathin SiGe-on-insulator structure by Ge condensation process combined with H+ irradiation and postannealing

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8 Author(s)
Miyao, Masanobu ; Department of Electronics, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581, Japan ; Tanaka, Masanori ; Tsunoda, Isao ; Sadoh, Taizoh
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Strain-relaxation process of SiGe-on-insulator (SGOI) structures in the oxidation induced Ge condensation method has been investigated as a function of the SiGe thickness. Complete relaxation was obtained for thick SGOI layers (≫100 nm). However, the relaxation rates abruptly decreased with decreasing SiGe thickness below 50 nm, i.e., the relaxation rate of 30% at 30 nm SiGe thickness. In order to improve this phenomenon, a method combined with H+ irradiation with a medium dose (5×1015 cm-2) and postannealing (1200 °C) has been developed. This successfully achieved the high relaxation rate (70%) in the ultrathin SGOI (30 nm).

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 14 )