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Analysis of graphene nanoribbons as a channel material for field-effect transistors

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8 Author(s)
Obradovic, B. ; Process Technology Modeling, Intel Corporation, Hillsboro, Oregon 97124 ; Kotlyar, R. ; Heinz, F. ; Matagne, P.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2191420 

Electronic properties of graphene (carbon) nanoribbons are studied and compared to those of carbon nanotubes. The nanoribbons are found to have qualitatively similar electron band structure which depends on chirality but with a significantly narrower band gap. The low- and high-field mobilities of the nanoribbons are evaluated and found to be higher than those of carbon nanotubes for the same unit cell but lower at matched band gap or carrier concentration. Due to the inverse relationship between mobility and band gap, it is concluded that graphene nanoribbons operated as field-effect transistors must have band gaps ≪0.5 eV to achieve mobilities significantly higher than those of silicon and thus may be better suited for low power applications.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 14 )

Date of Publication:

Apr 2006

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