By Topic

Correlation between optical properties and interface morphology of GaAs/AlGaAs quantum wells

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Moret, N. ; Ecole Polytechnique Fédérale de Lausanne (EPFL), Laboratory of Physics of Nanostructures, CH-1015 Lausanne, Switzerland ; Oberli, D.Y. ; Pelucchi, E. ; Gogneau, N.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2193039 

We investigate the embedded interfaces of GaAs/AlGaAs quantum wells grown by metal organic vapor phase epitaxy on slightly (≪1°)-misoriented (001) substrates using selective etching and atomic force microscopy. Depending on the substrate misorientation, we observe different growth modes at the embedded interfaces, which are directly correlated to the photoluminescence linewidth. We show that the narrowest linewidth is obtained on 0.2°-off (001) substrates for which the heterointerfaces consist of atomically smooth narrow terraces.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 14 )