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Browse Journals & Magazines > Applied Physics Letters ...> Volume:88 Issue:14 Help

Correlation between optical properties and interface morphology of GaAs/AlGaAs quantum wells

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6 Author(s)
Moret, N. ; Ecole Polytechnique Fédérale de Lausanne (EPFL), Laboratory of Physics of Nanostructures, CH-1015 Lausanne, Switzerland ; Oberli, D.Y. ; Pelucchi, E. ; Gogneau, N.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2193039 

We investigate the embedded interfaces of GaAs/AlGaAs quantum wells grown by metal organic vapor phase epitaxy on slightly (≪1°)-misoriented (001) substrates using selective etching and atomic force microscopy. Depending on the substrate misorientation, we observe different growth modes at the embedded interfaces, which are directly correlated to the photoluminescence linewidth. We show that the narrowest linewidth is obtained on 0.2°-off (001) substrates for which the heterointerfaces consist of atomically smooth narrow terraces.

Published in:
Applied Physics Letters  (Volume:88 ,  Issue: 14 )

Date of Publication: Apr 2006

Page(s):
141917 - 141917-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2193039
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Apr 2006

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