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Room-temperature terahertz emission from nanometer field-effect transistors

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13 Author(s)
Dyakonova, N. ; Groupe d’Etude des Semiconducteurs, UMR CNRS 5650, Université Montpellier 2, 34095 Montpellier, France ; El Fatimy, A. ; Łusakowski, J. ; Knap, W.
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Room-temperature generation of terahertz radiation in nanometer gate length InAlAs/InGaAs and AlGaN/GaN high-mobility transistors is reported. A well-defined source-drain voltage threshold for the emission exists, which depends on the gate bias. Spectral analysis of the emitted radiation is presented. The highest emission power emitted from a single device reached 0.1 μW.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 14 )