By Topic

Effect of hafnium germanate formation on the interface of HfO2/germanium metal oxide semiconductor devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
10 Author(s)
Van Elshocht, S. ; Interuniversitair Microelectronica Centrum (IMEC) vzw, Kapeldreef 75, B-3001 Heverlee, Belgium ; Caymax, M. ; Conard, T. ; De Gendt, S.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We have studied the thermal stability of HfO2 thin layers on germanium and the substrate interface development. HfO2 was deposited on Ge substrates and annealed in O2 or N2 at 500 °C (substrate temperature). After O2 anneal, we observed the formation of hafnium germanate, which is stable at 500 °C in N2 as opposed to GeO2 that desorbs as GeO. We believe that this hafnium germanate is an oxygen barrier and as such is at the origin of the much thinner interface between HfO2 and germanium as compared to silicon. In addition, results suggest that the HfGeOx is related to the high interface state density frequently reported for germanium metal oxide semiconductor devices.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 14 )