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Localized excitation of InGaAs quantum dots by utilizing a photonic crystal nanocavity

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5 Author(s)
Nomura, Masahiro ; Institute of Industrial Science, and Research Center for Advanced Science and Technology, and Nanoelectronics Collaborative Research Center, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan ; Iwamoto, Satoshi ; Nakaoka, T. ; Ishida, Satomi
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We have studied excitation wavelength dependence of light emission from InGaAs quantum dots (QDs) embedded in high-quality-factor photonic crystal nanocavities. The light emission of the cavity mode around 1 μm was very weak with below-band-gap excitation in the InGaAs wetting layer. However, the emission of the lowest-order cavity mode was strongly enhanced when the excitation wavelength was resonant with higher-order cavity modes. This phenomenon can be attributed to the local intensity enhancement of the excitation light which couples with the cavity mode. The on-resonant excitation technique selectively and efficiently excites only the QDs in the cavity without undesirable background emission.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 14 )

Date of Publication:

Apr 2006

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