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Organic nonvolatile memory by dopant-configurable polymer

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5 Author(s)
Qianxi Lai ; Department of Mechanical and Aerospace Engineering, University of California at Los Angeles, Los Angeles, California 90095 ; Zhu, Zuhua ; Yong Chen ; Patil, Satish
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2191874 

We report an organic, nonvolatile memory based on dopant concentration-induced conductance changes in a conjugated polymer. Consisting of a polymer poly [2-methoxy-5-(2-ethylhexyloxy)-p-phenylene vinylene] (MEH-PPV)/ionic conductor (RbAg4I5) bilayer sandwiched between two metal electrodes, the device is electrically switched between its low-conductance “off” state and high-conductance “on” state reversibly and repeatedly with on/off ratios above two orders of magnitude and pulse durations as short as 1 μs when a voltage exceeding its threshold values (≫+3.5 V or ≪-3.8 V) is applied. The conductance change is attributed to the injection/depletion of iodide dopant ions in the MEH-PPV layer by the applied electric field.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 13 )

Date of Publication:

Mar 2006

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