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Ambipolar organic field-effect transistors with air stability, high mobility, and balanced transport

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7 Author(s)
Wang, Haibo ; State Key Laboratory of Polymer Physics Chemistry and Changchun Institute of Applied Chemistry, Graduate School of Chinese Academy of Sciences, 5625 Renmin Street, Changchun 130022, People’s Republic of China ; Wang, Jun ; Yan, Xuanjun ; Shi, Jianwu
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Ambipolar organic field-effect transistors (OFETs) based on the organic heterojunction of copper-hexadecafluoro-phthalocyanine (F16CuPc) and 2,5-bis(4-biphenylyl) bithiophene (BP2T) were fabricated. The ambipolar OFETs eliminated the injection barrier for the electrons and holes though symmetrical Au source and drain electrodes were used, and exhibited air stability and balanced ambipolar transport behavior. High field-effect mobilities of 0.04 cm2/V s for the holes and 0.036 cm2/V s for the electrons were obtained. The capacitance-voltage characteristic of metal-oxide-semiconductor (MOS) diode confirmed that electrons and holes are transported at F16CuPc and BP2T layers, respectively. On this ground, complementary MOS-like inverters comprising two identical ambipolar OFETs were constructed.

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Applied Physics Letters  (Volume:88 ,  Issue: 13 )