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Comparison of structural and optical properties of InAs quantum dots grown by migration-enhanced molecular-beam epitaxy and conventional molecular-beam epitaxy

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6 Author(s)
Cho, N.K. ; Nano Device Research Center, Korea Institute of Science and Technology, Seoul 136-791, Korea ; Ryu, S.P. ; Song, J.D. ; Choi, W.J.
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We strongly support Guryanov’s speculation—that a thinner wetting layer is expected with quantum dots (QDs) grown by migration-enhanced epitaxy—with structural and optical measurements. InAs QDs grown by migration-enhanced molecular-beam epitaxy showed a larger size, lower density, ∼40% enhanced uniformity, ∼2 times larger aspect ratio, and a measurement temperature insensitivity of the photoluminescence linewidth compared to QDs grown by conventional molecular-beam epitaxy. The thickness of the wetting layer for the migration-enhanced epitaxial InAs QD (2.1 nm) was thinner than that of the counterpart (4.0 nm).

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Applied Physics Letters  (Volume:88 ,  Issue: 13 )