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Molecular beam epitaxy growth of In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor employing growth interruption and in situ rapid thermal annealing

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3 Author(s)
Soo-Ghang Ihn ; Department of Information and Communications, Gwangju Institute of Science and Technology (GIST), 1 Oryong-dong, Buk-gu, Gwangju, 500-712, Korea ; Seong June Jo ; Jong-In Song

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We investigated the effects of high temperature (∼700 °C) in situ rapid thermal annealing (RTA) carried out during growth interruption between spacer and δ-doping layers of an In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor (MHEMT) grown on a compositionally graded InGaAlAs buffer layer. The in situ RTA improved optical and structural properties of the MHEMT without degradation of transport property, while postgrowth RTA improved the structural property of the MHEMT but significantly degraded mobility due to the defect-assisted Si diffusion. The results indicate the potential of the in situ RTA for use in the growth of high-quality metamorphic epitaxial layers for optoelectronic applications requiring improved optical and electrical properties.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 13 )