Scheduled System Maintenance on December 17th, 2014:
IEEE Xplore will be upgraded between 2:00 and 5:00 PM EST (18:00 - 21:00) UTC. During this time there may be intermittent impact on performance. We apologize for any inconvenience.
By Topic

Molecular beam epitaxy growth of In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor employing growth interruption and in situ rapid thermal annealing

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Soo-Ghang Ihn ; Department of Information and Communications, Gwangju Institute of Science and Technology (GIST), 1 Oryong-dong, Buk-gu, Gwangju, 500-712, Korea ; Seong June Jo ; Jong-In Song

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We investigated the effects of high temperature (∼700 °C) in situ rapid thermal annealing (RTA) carried out during growth interruption between spacer and δ-doping layers of an In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor (MHEMT) grown on a compositionally graded InGaAlAs buffer layer. The in situ RTA improved optical and structural properties of the MHEMT without degradation of transport property, while postgrowth RTA improved the structural property of the MHEMT but significantly degraded mobility due to the defect-assisted Si diffusion. The results indicate the potential of the in situ RTA for use in the growth of high-quality metamorphic epitaxial layers for optoelectronic applications requiring improved optical and electrical properties.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 13 )