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Current transport studies of ZnO/p-Si heterostructures grown by plasma immersion ion implantation and deposition

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8 Author(s)
Chen, X.D. ; Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, Peoples’s Republic of China ; Ling, C.C. ; Fung, S. ; Beling, C.D.
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Rectifying undoped and nitrogen-doped ZnO/p-Si heterojunctions were fabricated by plasma immersion ion implantation and deposition. The undoped and nitrogen-doped ZnO films were n type (n∼1019 cm-3) and highly resistive (resistivity ∼105 Ω cm), respectively. While forward biasing the undoped-ZnO/p-Si, the current follows Ohmic behavior if the applied bias Vforward is larger than ∼0.4 V. However, for the nitrogen-doped-ZnO/p-Si sample, the current is Ohmic for Vforward≪1.0 V and then transits to J∼V2 for Vforward≫2.5 V. The transport properties of the undoped-ZnO/p-Si and the N-doped-ZnO/p-Si diodes were explained in terms of the Anderson model and the space charge limited current model, respectively.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 13 )

Date of Publication:

Mar 2006

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