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Si and SiO2 layer transfer induced by mechanical residual stress

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2 Author(s)
Loryuenyong, V. ; Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, California 94720 ; Cheung, N.W.

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Using the polymer SU-8 as a bonding and stress-inducing layer, we have demonstrated that Si and SiO2 layers can be transferred by mechanical cleavage to SU-8/glass substrates without ion implantation of the donor wafers. Cracks tend to propagate under mode II criterion (KII=0) at a characteristic depth defined by the residual stress and elastic properties of the Si/SU-8/glass matrix. An analytical model is developed and verified for the dependence of the measured characteristic crack depth on the elastic modulus of substrate materials.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 13 )