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Room-temperature electroluminescence of AlSb/InAsSb single quantum wells grown by metal organic vapor phase epitaxy

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10 Author(s)
Moiseev, K.D. ; A.F. Ioffe Physico-Technical Institute, RAS, Politekhnicheskaya 26, St. Petersburg, 194021, Russia ; Ivanov, E.V. ; Zegrya, G.G. ; Mikhailova, M.P.
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Intense mid-infrared (λ∼2 μm) room temperature electroluminescence from metal organic vapor phase epitaxy (MOVPE) grown type-I single AlSb/InAsSb/AlSb quantum wells (QWs) is reported. The spectral position of the electroluminescent peaks is in good agreement with k∙p envelope function calculation in the frame of four-band Kane’s model taking into account the intermixing of s and p states in the deep quantum well. A four times increase of the emission intensity with temperature increasing from 77 to 300 K can be explained by highly efficient radiative recombination of the electrons injected into the narrow AlSb/InAsSb/AlSb QW due to its specific design, leading to Auger process suppression.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 13 )