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Barrier composition dependence of differential gain and external differential quantum efficiency in 1.3-μm strained-layer multiquantum-well lasers

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4 Author(s)
Kito, M. ; Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan ; Otsuka, N. ; Ishino, Masato ; Matsui, Yasushi

Dependence of the differential gain and the external differential quantum efficiency on the composition of InGaAsP barrier layers were investigated for 1.3 μm InGaAsP-InGaAsP compressively strained layer (SL) multiquantum well (MQW) lasers. In this investigation, we compared between SL-MQW lasers and unstrained MQW lasers having the same well thicknesses and the same emitting wavelength in order to clarify the effect of strain for each barrier composition. As a result It has been found that the barrier composition has large influence on the differential gain and the external differential quantum efficiency in the SL-MQW lasers. Narrower band-gap barrier means little effect of strain on the differential gain due to the electron overflow from a well layer, while wider band-gap barrier means degradation in the differential gain and the external differential quantum efficiency due to the nonuniform injection of hole into a well layer. In this experiment, the barrier composition of 1.05 μm is suitable for 1.3 μm InGaAsP-InGaAsP SL-MQW lasers to realize large differential gain and high external differential quantum efficiency simultaneously

Published in:

Quantum Electronics, IEEE Journal of  (Volume:32 ,  Issue: 1 )

Date of Publication:

Jan 1996

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