We fabricated high-performance ZnO thin-film transistors on gate dielectrics of HfO2, HfSiOx, and Al2O3, grown by atomic layer deposition (ALD). Devices on HfO2 had a mobility of 12.2 cm2/V s with a threshold voltage of 2.6 V and subthreshold slope of 0.5 V/decade. Device performance on Al2O3 depended on synthesis temperature. For 100 nm thick Al2O3, synthesized at 200 °C, ZnO devices had a mobility of 17.6 cm2/V s with a threshold voltage of 6 V and less than ∼0.1 nA gate leakage at 20 V. The overall trends were that devices on Hf oxides had a lower threshold voltage, while the gate leakage current density was lower on Al2O3. Device characteristics for all ALD dielectrics exhibited negligibly small hysteresis, suggesting a low defect density at the interface of ZnO with the gate dielectric.