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Monolithic integration of InGaAsP-laser with transferred-electron device as fast laser driver

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2 Author(s)
Hahn, D. ; Inst. fur Hochfrequenztech., Tech. Univ. Braunschweig, Germany ; Schlachetzki, A.

A monolithically integrated laser driver circuit has been fabricated incorporating an InGaAs-transferred electron device (TED) and an InGaAsP mushroom stripe laser emitting at 1.3-μm wavelength. The TED provides a large-signal modulation of the laser diode along with a pulse shaping of the optical output signal. A threshold current of 18 mA of the integrated laser has been obtained. The modulation of the optical output signal by the TED has been demonstrated. For practical application of the circuit under dc-bias conditions the thermal resistance of the TED's has been calculated and an optimum device structure is proposed. The possibility of triggering the circuit optically will be discussed

Published in:

Quantum Electronics, IEEE Journal of  (Volume:32 ,  Issue: 1 )