Cart (Loading....) | Create Account
Close category search window

Temperature dependence of exciton localization dynamics in InxGa1-xN epitaxial films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Kanemitsu, Yoshihiko ; Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan ; Tomita, Koichi ; Hirano, Daisuke ; Inouye, Hideyuki

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We have studied the temperature dependence of exciton localization dynamics in InxGa1-xN epitaxial films (x=0.09) by means of optical Kerr-gate time-resolved photoluminescence (PL) spectral measurements. During 30 ps after 150 fs laser excitation, the PL dynamics is sensitive to the measurement temperature. In the temperature range of 6–50 K, the PL rise time decreases and the PL peak energy shifts to higher energy with an increase of temperature. At high temperatures above 80 K, the thermal quenching of the PL at shallow localized states occurs. The energy relaxation processes of excitons in localized states of InxGa1-xN films are discussed.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 12 )

Date of Publication:

Mar 2006

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.