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Optical power degradation mechanisms in AlGaN-based 280 nm deep ultraviolet light-emitting diodes on sapphire

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6 Author(s)
Gong, Z. ; Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208 ; Gaevski, M. ; Adivarahan, V. ; Sun, W.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2187429 

We present a study of reliability of AlGaN-based 280 nm deep ultraviolet light-emitting diodes on sapphire substrate grown by migration-enhanced metal-organic chemical vapor deposition. Two modes of optical power degradation were observed: catastrophic and gradual. The catastrophic degradation is believed to be due to metal alloying at macroscopic defects in the top p layers of the light-emitting diode structure. For the gradual power degradation, two time constants were determined, which were temperature and bias dependent. For the temperature-dependent part, the values of the activation energies and room-temperature degradation rates at dc currents of 10 and 20 mA were determined to be 0.23 and 0.27 eV and 1.31×10-3 and 5.93×10-3 h-1, respectively.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 12 )

Date of Publication:

Mar 2006

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