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Thermal stability of a HfO2/SiO2 interface

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4 Author(s)
Ikarashi, Nobuyuki ; System Devices Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara 229-1198, Japan ; Watanabe, K. ; Masuzaki, K. ; Nakagawa, Takashi

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Using high-angle annular-dark-field scanning transmission electron microscopy, we showed how annealing at 1000 °C changes the chemical composition distribution at a HfO2/SiO2 interface. The observed change in the distribution was analyzed in terms of Hf diffusion in SiO2; the diffusion coefficient was estimated to be 2.5×10-18 cm2/s. This diffusion coefficient indicates that the high-temperature annealing, such as that in the conventional dopant activation process used to fabricate semiconductor devices, barely changes the chemical composition distribution at the HfO2/SiO2 interface.

Published in:

Applied Physics Letters  (Volume:88 ,  Issue: 10 )