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Directionally dependent ferroelectric phase transition order of anisotropic epitaxial BaxSr1-xTiO3 thin films

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5 Author(s)
Bellotti, Jeffrey A. ; U.S. Naval Research Laboratory, Washington, D.C. 20375 ; Chang, Wontae ; Qadri, Syed B. ; Kirchoefer, Steven W.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2161937 

Epitaxial Ba0.5Sr0.5TiO3 thin films were grown by pulsed-laser deposition on (100) LaAlO3 substrates in two distinct strain states, c/a≫1 and c/a≪1. X-ray diffraction measurements over the temperature range of 20 °C to -120 °C showed that the change in the c/a ratio with decreasing temperature was discontinuous and positive for the film with c/a≫1, and continuous and negative for the film with c/a≪1. These symmetry changes in the c/a ratio with temperature were correlated with measurements of the in-plane dielectric properties, and showed that the polarization in these two types of structures has characteristically different behavior that is highly directionally-dependent.

Published in:
Applied Physics Letters  (Volume:88 ,  Issue: 1 )

Date of Publication: Jan 2006

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