By Topic

Analysis of the attenuation ratio of MQW optical intensity modulator for 1.55 μm wavelength taking account of electron wave function leakage

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Ikeda, T. ; Fujitsu Labs. Ltd., Atsugi, Japan ; Ishikawa, H.

A theoretical analysis of an attenuation ratio for MQW optical intensity modulator was carried out taking account of the leakage of electron envelope function from the well layer. In the MQW modulator using InGaAsP material, the leakage of electron envelope function is large even for a low applied field because of the comparatively low potential barrier for electron. A normalization scheme in energy space was introduced for such leaky envelope function and field dependence of the Stark shift and oscillator strength have been analyzed by solving exciton effective mass equation. This approach was applied to MQW modulator for the wavelength of 1.55 μm for optical communication system. The well width and well number for large attenuation ratio with small residual absorption have been obtained. The calculation was compared with the experimental result and the difference was discussed

Published in:

Quantum Electronics, IEEE Journal of  (Volume:32 ,  Issue: 2 )