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Growth of high-quality ZnMgO epilayers and ZnO/ZnMgO quantum well structures by radical-source molecular-beam epitaxy on sapphire

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8 Author(s)
Sadofev, S. ; Institut für Physik, Humboldt-Universität zu Berlin, Newtonstrasse 15, 12489 Berlin, Germany ; Blumstengel, S. ; Cui, J. ; Puls, J.
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We report on a specific growth procedure combining low-temperature growth of ZnMgO and postgrowth annealing at intermediate temperatures. Despite the large lattice misfit induced by the sapphire substrate, layer-by-layer growth is accomplished up to the phase-separation limit found at a c-lattice constant of 0.5136 nm and Mg mole fraction of 0.40. The procedure allows us to grow quantum wells with atomically smooth interfaces in a wide range of structural designs exhibiting prominent emission features up to room temperature.

Published in:

Applied Physics Letters  (Volume:87 ,  Issue: 9 )

Date of Publication:

Aug 2005

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