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Retraction: “Functional characteristics in asymmetric source/drain InAlAsSb/InGaAs/InP δ-doped high electron mobility transistor” [Appl. Phys. Lett. 86, 033505 (2005)]

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2 Author(s)
Lee, C.S. ; Department of Electronic Engineering, Feng Chia University, 100 Wenhwa Rd. Taichung, Taiwan, Republic of China ; Hsu, W.-C.

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Published in:

Applied Physics Letters  (Volume:87 ,  Issue: 8 )