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Large magnetoresistance ratio of 10% by Fe50Co50 layers for current-confined-path current-perpendicular-to-plane giant magnetoresistance spin-valve films

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5 Author(s)
Fukuzawa, Hideaki ; Corporate R&D Center, Toshiba Corporation, 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki, 212-8582, Japan ; Yuasa, Hiromi ; Hashimoto, Susumu ; Iwasaki, Hitoshi
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We have realized a large magnetoresistance (MR) ratio of 10.2% by current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) spin-valve films having current-confined-path (CCP) structure formed by AlCu-NOL (nano-oxide-layer). CPP-GMR with conventional Co90Fe10 pinned and free layers showed an MR ratio and a ΔRA (the change of resistance area product) were 4% and 20 mΩ μm2, respectively, at a small RA (resistance area product) of 500 mΩ μm2. By replacing the Co90Fe10 layers by Fe50Co50 layers both for pinned and free layers, we have successfully realized a MR ratio and a ΔRA of 7.5% and 37.5 mΩ μm2, respectively, at a small RA of 500 mΩ μm2. Moreover, a large MR ratio of 10.2% and a large ΔRA of 418 mΩ μm2 were realized at a relatively large RA of 4100 mΩ μm2. This large MR ratio by using Fe50Co50 layers was due to a larger spin-dependent interface scattering factor γ of 0.72 for the interface between Fe50Co- - 50 and Cu, which was improved from a γ of 0.62 for the interface between Co90Fe10 and Cu.

Published in:

Applied Physics Letters  (Volume:87 ,  Issue: 8 )

Date of Publication:

Aug 2005

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