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A 5-10 GHz 15-W GaAs MESFET amplifier with flat gain and power responses

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6 Author(s)
Y. Itoh ; Electro-Opt. & Microwave Syst. Lab., Mitsubishi Electr. Corp., Kanagawa, Japan ; M. Mochizuki ; M. Kohno ; H. Masuno
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A 5-10 GHz 15-W GaAs MESFET amplifier has been developed. It utilizes a multisection maximally flat impedance transformer whose length is designed to become a quarter wavelength at the highest frequency of the design band to achieve flat gain and flat power responses over a wide bandwidth. With the use of this transformer, the amplifier has achieved a linear gain of 9±1 dB, a P1 dB of 41.8±1 dBm, and a power-added efficiency of 27.5±7.5% over 5-10 GHz, which demonstrate the highest power-bandwidth product ever achieved by high-power amplifiers using GaAs MESFET's, PHEMT's or HBT's

Published in:

IEEE Microwave and Guided Wave Letters  (Volume:5 ,  Issue: 12 )