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High drain current density and reduced gate leakage current in channel-doped AlGaN/GaN heterostructure field-effect transistors with Al2O3/Si3N4 gate insulator

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5 Author(s)
Maeda, N. ; NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan ; Chengxin Wang ; Enoki, T. ; Makimoto, T.
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Channel-doped AlGaN/GaN heterostructure field-effect transistors (HFETs) with metal-insulator-semiconductor (MIS) structures have been fabricated to obtain the high drain current density and reduced gate leakage current. A thin bilayer dielectric of Al2O3(4 nm)/Si3N4(1 nm) was used as the gate insulator, to simultaneously take advantage of the high-quality interface between Si3N4 and AlGaN, and high resistivity and a high dielectric constant of Al2O3. A MIS HFET with a gate length of 1.5 μm has exhibited a record high drain current density of 1.87 A/mm at a gate voltage (Vg) of +3 V, which is ascribed to a high applicable Vg and a very high two-dimensional electron gas (2DEG) density of 2.6×1013 cm-2 in the doped channel. The gate leakage current was reduced by two or three orders of magnitude, compared with that in normal HFETs without a gate insulator. The transconductance (gm) was 168 mS/mm, which is high in the category of the MIS structure. Channel-doped MIS HFETs fabricated have thus been proved to exhibit the high current density, reduced gate leakage current, and relatively high transconductance, hence, promising for high-power applications.

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Applied Physics Letters  (Volume:87 ,  Issue: 7 )