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Open circuit voltage improvement of high-deposition-rate microcrystalline silicon solar cells by hot wire interface layers

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6 Author(s)
Mai, Y. ; IPV, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany ; Klein, S. ; Carius, R. ; Stiebig, H.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2011771 

Significant improvement in open circuit voltage and fill factor was achieved for microcrystalline silicon c-Si:H) solar cells deposited by plasma-enhanced chemical vapor deposition (PECVD) by the incorporation of an intrinsic μc-Si:H p/i buffer layer fabricated by hot-wire (HW) CVD. The improved p/i interface quality, likely due to the ion-free deposition on the p layers in the HWCVD process, was concluded from a considerably enhanced blue light response in such solar cells. Using this buffer layer concept allows the authors to apply high deposition rate PECVD processes for the μc-Si:H i layer material, yielding a high efficiency of 10.3% for a single junction μc-Si:H solar cell.

Published in:

Applied Physics Letters  (Volume:87 ,  Issue: 7 )

Date of Publication:

Aug 2005

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