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Surface plasmon enhanced spontaneous emission rate of InGaN/GaN quantum wells probed by time-resolved photoluminescence spectroscopy

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6 Author(s)
Okamoto, Koichi ; Department of Electrical Engineering and Physics, California Institute of Technology, Pasadena, California 91125 ; Niki, Isamu ; Scherer, Axel ; Narukawa, Yukio
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We observed a 32-fold increase in the spontaneous emission rate of InGaN/GaN quantum well (QW) at 440 nm by employing surface plasmons (SPs) probed by time-resolved photoluminescence spectroscopy. We explore this remarkable enhancement of the emission rates and intensities resulting from the efficient energy transfer from electron-hole pair recombination in the QW to electron vibrations of SPs at the metal-coated surface of the semiconductor heterostructure. This QW-SP coupling is expected to lead to a new class of super bright and high-speed light-emitting diodes (LEDs) that offer realistic alternatives to conventional fluorescent tubes.

Published in:

Applied Physics Letters  (Volume:87 ,  Issue: 7 )

Date of Publication:

Aug 2005

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