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THz sideband generation at telecom wavelengths in a GaAs-based quantum cascade laser

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7 Author(s)
Dhillon, S.S. ; Matériaux et phénomènes quantiques, Université Paris 7, 75251 Paris Cedex 05, France and Thales Research and Technology, Domaine de Corbeville, 91404 Orsay cedex, France ; Sirtori, C. ; Barbieri, S. ; De Rossi, A.
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Terahertz sideband generation is demonstrated by using the nonlinear intracavity interaction between far-infrared and near-infrared modes in a GaAs waveguide. A low power near-infrared beam at 1.32 μm is coupled into a quantum cascade laser operating at 104 μm (2.9 THz), which acts as both the THz source and the nonlinear medium. The conversion efficiency of the resulting sidebands is found to be approximately 4.5×10-6.

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Applied Physics Letters  (Volume:87 ,  Issue: 7 )