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Electrical characterization of band gap states in C-doped TiO2 films

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4 Author(s)
Nakano, Yoshitaka ; Toyota Central Research and Development Laboratories, Inc., Nagakute, Aichi 480-1192, Japan ; Morikawa, T. ; Ohwaki, Takeshi ; Taga, Yasunori

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We report on band gap states in C-doped TiO2 films that were prepared by oxidative annealing of sputtered TiC films at 550 °C in flowing O2 gas. Deep-level optical spectroscopy measurements revealed three deep levels located at ∼0.86, ∼1.30, and ∼2.34 eV below the conduction band. The first level is probably attributable to the intrinsic nature of TiO2, whereas the latter two levels are newly introduced by the C-doping. In particular, the pronounced 2.34 eV band contributes to band gap narrowing by mixing with the O 2p valence band. Additionally, the 0.86 and 1.30 eV levels can be active as an efficient generation-recombination center.

Published in:

Applied Physics Letters  (Volume:87 ,  Issue: 5 )