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Ultrathin and narrow semiconductor body on insulator allows aggressive scaling of nonvolatile memories for low power, low read/write voltage, high retention, and high density in comparison with bulk devices. We have fabricated memory cells with single-wall carbon nanotubes as channels and gold nanocrystals as charge storage nodes. The devices have large memory windows with low voltage operations and single-electron-controlled drain currents. Coulomb blockade in nanocrystals combined with single charge sensitivity of the nanotube field-effect transistor can potentially enable multilevel operations. Measured retention time is longer than 6200 s at 10 K, but is only about 800 s at room temperature due to the high leakage in evaporated tunnel oxide used in this study. Better dielectric on nanotubes is expected to greatly improve the room-temperature performance for the nanotube memory device.