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Carbon nanotube-based nonvolatile memory with charge storage in metal nanocrystals

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3 Author(s)
Ganguly, U. ; Intel Corporation, 2200 Mission College Boulevard, Santa Clara, California 95054 ; Kan, E.C. ; Zhang, Yuegang

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1999014 

Ultrathin and narrow semiconductor body on insulator allows aggressive scaling of nonvolatile memories for low power, low read/write voltage, high retention, and high density in comparison with bulk devices. We have fabricated memory cells with single-wall carbon nanotubes as channels and gold nanocrystals as charge storage nodes. The devices have large memory windows with low voltage operations and single-electron-controlled drain currents. Coulomb blockade in nanocrystals combined with single charge sensitivity of the nanotube field-effect transistor can potentially enable multilevel operations. Measured retention time is longer than 6200 s at 10 K, but is only about 800 s at room temperature due to the high leakage in evaporated tunnel oxide used in this study. Better dielectric on nanotubes is expected to greatly improve the room-temperature performance for the nanotube memory device.

Published in:

Applied Physics Letters  (Volume:87 ,  Issue: 4 )

Date of Publication:

Jul 2005

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