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Fe-catalytic growth of ZnSe nanowires on a ZnSe(001) surface at low temperatures by molecular-beam epitaxy

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5 Author(s)
Ohno, Yutaka ; Department of Physics, Graduate School of Science, Osaka University, 1-1, Machikane-yama, Toyonaka, Osaka 560-0043, Japan ; Shirahama, Takeo ; Takeda, S. ; Ishizumi, Atsushi
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We grew ZnSe needle-like nanowires on a ZnSe/GaAs epilayer using Fe catalysts by means of molecular-beam epitaxy operated at low temperatures of 250–350 °C, which are comparable to the usual temperatures for fabrication of ZnSe-based optoelectronic devices. The diameters at the tops of the nanowires ranged from 8 to 20 nm, and the typical length was about 200 nm. The number density of the nanowires was the order of 109 cm-2. A nanowire was the zinc blende structure and the longitudinal direction was <001>,<111>,<110>, or <112>. Photoluminescence spectroscopy implied that the optical property of the nanowires differs from that of the bulk crystals.

Published in:

Applied Physics Letters  (Volume:87 ,  Issue: 4 )

Date of Publication:

Jul 2005

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