We grew ZnSe needle-like nanowires on a ZnSe/GaAs epilayer using Fe catalysts by means of molecular-beam epitaxy operated at low temperatures of 250–350 °C, which are comparable to the usual temperatures for fabrication of ZnSe-based optoelectronic devices. The diameters at the tops of the nanowires ranged from 8 to 20 nm, and the typical length was about 200 nm. The number density of the nanowires was the order of 109 cm-2. A nanowire was the zinc blende structure and the longitudinal direction was <001>,<111>,<110>, or <112>. Photoluminescence spectroscopy implied that the optical property of the nanowires differs from that of the bulk crystals.