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Short-period InAs/GaSb type-II superlattices for mid-infrared detectors

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6 Author(s)
Haugan, H.J. ; Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright–Patterson Air Force Base, Ohio 45433-7707 ; Szmulowicz, F. ; Mahalingam, K. ; Brown, G.J.
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Using a newly developed envelope function approximation model that includes interface effects, several InAs/GaSb Type-II superlattices (SLs) were designed for the 4 μm detection threshold. The present model predicts that a given threshold can be reached with a wide range of progressively thinner SL periods and these thinner designs hold a promise of higher mobilities and longer Auger lifetimes, thus higher detector operating temperatures. The proposed SL structures were grown by molecular-beam epitaxy with slow growth rates. As predicted, the band gaps of SLs determined by low-temperature photoluminescence remained constant around 330 meV for the samples in the period range from 50.6 to 21.2 Å.

Published in:

Applied Physics Letters  (Volume:87 ,  Issue: 26 )