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Extrinsic origin of giant permittivity in hexagonal BaTiO3 single crystals: Contributions of interfacial layer and depletion layer

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6 Author(s)
Yu, Jianding ; Japan Aerospace Exploration Agency, ISS Science Project Office, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505, Japan ; Ishikawa, Takehiko ; Arai, Yasutomo ; Yoda, Shinichi
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Three dielectric relaxations in hexagonal (h)-BaTiO3 single crystals exhibiting giant permittivity were detected in a frequency range of 100 Hz–3 GHz and analyzed by an equivalent circuit with three parallel RC elements. A best-fit result indicated that the three dielectric relaxations were the responses of bulk crystal with a capacitance of 1 pF, an interfacial layer with a capacitance of 1.4 nF, and a depletion layer with a capacitance of 1 nF. We confirmed that a giant permittivity exceeding 105 could be achieved by the interfacial layer in the h-BaTiO3 crystal. In addition, a Schottky barrier height at the contacting interface between Cu electrodes and the h-BaTiO3 surface was estimated as 1.56 eV from the voltage dependence of capacitance.

Published in:

Applied Physics Letters  (Volume:87 ,  Issue: 25 )