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Effects of heavy boron doping on the valence band offset at the Si1-xGex/Si interface and Si1-xGex band gap

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2 Author(s)
Jing Liu ; North Carolina State University, Department of Electrical and Computer Engineering, Raleigh, North Carolina 27695 ; Ozturk, Mehmet C.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2149295 

Heavily boron-doped Si1-xGex alloys are currently used in recessed source/drain regions of nanoscale metal oxide silicon field effect transistors. Small boron atoms can partially compensate the Si1-xGex strain and change its band gap, which can influence key device parameters such as the junction contact resistance. In this work, the depletion region capacitance of SiGe/Si heterojunction diodes was measured to determine the valence band offset and the Si1-xGex band gap. The results show that boron doping can have a significant impact on the Si1-xGex band gap and values between those of relaxed and fully strained Si1-xGex alloys can be obtained.

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Applied Physics Letters  (Volume:87 ,  Issue: 25 )