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Browse Journals & Magazines > Applied Physics Letters ...> Volume:87 Issue:25 Help

Effects of heavy boron doping on the valence band offset at the Si1-xGex/Si interface and Si1-xGex band gap

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2 Author(s)
Jing Liu ; North Carolina State University, Department of Electrical and Computer Engineering, Raleigh, North Carolina 27695 ; Ozturk, Mehmet C.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2149295 

Heavily boron-doped Si1-xGex alloys are currently used in recessed source/drain regions of nanoscale metal oxide silicon field effect transistors. Small boron atoms can partially compensate the Si1-xGex strain and change its band gap, which can influence key device parameters such as the junction contact resistance. In this work, the depletion region capacitance of SiGe/Si heterojunction diodes was measured to determine the valence band offset and the Si1-xGex band gap. The results show that boron doping can have a significant impact on the Si1-xGex band gap and values between those of relaxed and fully strained Si1-xGex alloys can be obtained.

Published in:
Applied Physics Letters  (Volume:87 ,  Issue: 25 )

Date of Publication: Dec 2005

Page(s):
252119 - 252119-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2149295
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Dec 2005

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